基于碳化硅衬底的宽禁带半导体外延

宽禁带半导体具备禁带宽度大、电子饱和飘移速度高、击穿场强大等优势,是制备高功率密度、高频率、低损耗电子器件的理想材料。碳化硅(SiC)材料具有热导率高、化学稳定性好、耐高温等优点,在SiC衬底上外延宽禁带半导体材料,对充分发挥宽禁带半导体材料的优势,并提升宽禁带半导体电子器件的性能具有重要意义。得益于SiC衬底质量持续提升及成本不断降低,基于SiC衬底的宽禁带半导体电子市场占比呈现逐年增加的态势。在SiC衬底上外延生长高质量的宽禁带半导体材料是提高宽禁带半导体电子器件性能及可靠性的关键瓶颈。本文综述了近年来国内外研究者们在SiC衬底上外延SiC、氮化镓(GaN)、氧化镓(Ga₂O₃)所取得的研究进展,并展望了SiC衬底上宽禁带半导体外延的发展及应用前景。     

铟镓共掺杂对n-ZnO纳米棒/p-GaN异质结生长行为和光电性能的影响

利用低温水热法在p-GaN薄膜上生长了铟(In)和镓(Ga)共掺杂的ZnO纳米棒。X射线衍射(XRD)、X射线光电子能谱(XPS)和X射线能量色谱仪(EDS)结果表明,In和Ga已固溶到ZnO晶格中。扫描电子显微镜(SEM)结果表明, ZnO纳米棒具有良好的c轴取向性,随着In和Ga共掺杂浓度的增加,纳米棒的直径减小,密度增加。XRD结果表明,In和Ga共掺杂引起ZnO晶格常数增大,导致(002)衍射峰向低角度方向偏移。同时,ZnO的光学性质受到In和Ga共掺杂的影响。与纯ZnO相比, 共掺杂ZnO纳米棒的紫外发射峰都出现轻微红移,这是表面共振和带隙重整效应综合作用的结果。I-V特性曲线表明,随着In和Ga共掺杂浓度的增加,n-ZnO纳米棒/p-GaN异质结具有更好的导电性。     

ZnO‐Coated Carbon Nanotubes: Inter‐Diffusion of Carboxyl Groups and Enhanced Photocurrent Generation

ZnO is a defect‐governed oxide and emits light at both visible and UV regimes. This work employs atomic layer deposition to produce oxide particles on oxygenated carbon nanotubes, and the composites only show emission profiles at short wavelengths. The quenching of defect‐related emissions at long wavelengths is verified, owing to carboxyl diffusion into oxygen vacancies, and doping is supported by ZnCO₃ formation in oxide lattice. Fully coated tubes display an increased photocurrent and the quantum efficiency increases by 22 % relative to the bare nanotubes.     

初始微观结构缺陷和断裂的温度依赖及相关性

纳米线(NW)结构内的微观结构缺陷对NW的机械性能存在一定的影响。NW断裂位置的预测关系着纳米器件应用的寿命,进而引起了人们的广泛关注。在本工作中,基于统计分析,分别研究了单晶铜纳米线(Cu NW)拉伸过程中出现的断裂位置以及在应力屈服点处产生的初始微观结构缺陷(初始缺陷)的位置对温度的依赖性,进一步探究了两者之间的联系。利用分子动力学(MD)模拟了单晶Cu NW在20~300 K的温度范围内的拉伸状态,共包含6个体系,各温度体系包含300个独立的样本。基于机器学习,采用density-based spatial clustering of applications with noise (DBSCAN)算法,将hexagonal close-packed (hcp)原子划分为各个初始缺陷以进一步确定其位置。统计结果显示,当温度低于50 K时,初始缺陷的位置集中在NW的两端。随着模拟温度的上升,MD模拟结果展现了单晶Cu NW的拉伸过程中的杨氏模量、平均屈服应力、平均势能等机械性能对温度的依赖性。温度的升高进一步促使了更多初始缺陷的产生,并使得初始缺陷的位置由统计分布的两端向中间平均化。与初始缺陷相比,各温度下的断裂位置集中在两端。统计结果表明,模拟的温度范围对NW的断裂位置无明显影响,但对初始缺陷的产生具有明显影响。当温度低于100 K时,初始缺陷的位置分布与断裂位置分布呈现了一致性。由于两者具有不同的温度依赖,其差异随着温度的上升逐渐显现。对不同温度下的微观结构形变行为观察发现,断裂失效明显受到NW两端的表面效应和阻挡效应的影响。最终的断裂位置受塑性形变中后期的影响,与应力屈服区产生的初始缺陷无直接联系。     

The enhanced photo-stability of defective Ag3PO4 tetrahedron prepared using tripolyphosphate

Ag₃PO₄ is an excellent photocatalyst under visible light irradiation. However, the low stability due to photo-corrosion is still an obstacle in its application. It is a big challenge to improve stability using synthesis modification. Here, the photocatalyst stability enhancement was successfully prepared by tripolyphosphate. Photocatalyst was prepared by reacting AgNO₃ solution with STPP (sodium tripolyphosphate) solution to form a white suspension. The addition of phosphate solution to the white suspension produces yellow Ag₃PO₄ with a new type of defective photocatalyst. The XPS measurement showed that the increase of STPP concentration significantly decreased the Ag/P atomic ratio, indicating the silver vacancy formation on the surface of Ag₃PO₄. The photocatalytic reaction formed a metallic Ag with a lower d-space in the cube structure occurred in the silver vacancy of Ag₃PO₄. This defect increases the interaction of metallic silver and Ag₃PO₄. The enhanced photo-stability might be induced by metallic silver that can act as a photogenerated electron acceptor.     

Liquid Fluxional Ga Single Atom Catalysts for Efficient Electrochemical CO2 Reduction

Precise design and tuning of the micro-atomic structure of single atom catalysts (SACs) can help efficiently adapt complex catalytic systems. Herein, we inventively found that when the active center of the main group element gallium (Ga) is downsized to the atomic level, whose characteristic has significant differences from conventional bulk and rigid Ga catalysts. The Ga SACs with a P, S atomic coordination environment display specific flow properties, showing CO products with FE of ≈92 % at −0.3 V vs. RHE in electrochemical CO₂ reduction (CO₂RR). Theoretical simulations demonstrate that the adaptive dynamic transition of Ga optimizes the adsorption energy of the *COOH intermediate and renews the active sites in time, leading to excellent CO₂RR selectivity and stability. This liquid single atom catalysts system with dynamic interfaces lays the foundation for future exploration of synthesis and catalysis.     

多种纳米结构Fe掺杂TiO2光热耦合水分解制氢研究

氧空位是材料缺陷工程的重要组成. 基于光生氧空位的直接热利用, 实现纯水分解制氢的光热耦合实验, 被认为是太阳能综合利用的有效途径. 以多种制备方法合成的TiO₂纳米材料为基础, 研究了多种形貌纳米TiO₂及其Fe掺杂改性材料的光热耦合反应能力. 通过高分辨透射电子显微镜(HRTEM)、 X射线衍射(XRD)和电子顺磁共振(EPR)对晶体特征进行表征, 利用漫反射光谱(DRS)、 光致发光(PL)和三电极测试法表征了材料的性能, 并结合密度泛函理论(DFT)计算了产氢反应路径. 研究结果表明, 溶胶-凝胶法制备的纳米颗粒相比水热法制备的纳米片及纳米线, 体相内缺陷较多, 载流子强度高, 光热耦合产氢效果较差. Fe掺杂改性扩展了光响应, 增强了载流子分离和寿命, 降低了电子传输阻抗, 利于光反应过程中光生氧空位的形成, 克服了制氢反应中的关键能垒. 同时, 纳米材料中的缺陷促进了Fe离子的有效掺杂, Fe掺杂TiO₂纳米颗粒的光热耦合平均产氢量为9.73 μmol/g, 性能提升达13倍.     

双功能改性的T型分子筛膜用于有机溶剂脱水

将3-氨丙基三乙氧基硅烷（APTES）引入到T型分子筛膜表面,用以修饰多晶膜合成过程中产生的缺陷。X射线衍射、场发射扫描电子显微镜、X射线光电子能谱和FT-IR等方法的表征结果显示,APTES通过“键合”的形式被成功地修饰到膜表面上。APTES层起到2个作用：一是提高膜的亲水性;二是减少膜层的缺陷。将修饰后的膜应用在348 K、90%的异丙醇水溶液的脱水时,该膜表现出比较高的分离因子和通量。该方法重复性良好,5个修饰后的膜样品的选择性平均增加了大约8倍（从359±23增加到2 934±183）,而渗透通量仅仅从（3.52±0.10） kg·m^-2·h^-1降低到（3.06±0.14） kg·m^-2·h^-1（减少13.07%）。在363 K下,修饰的膜经过100 h的连续测试,膜渗透测得的水含量均可达到99.50%以上,表明修饰后的膜性能较稳定。     

Computational Screening of 3 d Transition Metal Atoms Anchored on Defective Graphene for Efficient Electrocatalytic N2 Fixation

The synthesis of ammonia (NH₃) through the electrochemical reduction of molecular nitrogen (N₂) is a promising strategy for significantly reducing energy consumption compared to traditional industrial processes. Herein, we report the design of a series of monovacancy and divacancy defective graphenes decorated with single 3d transition metal atoms (TM@MVG and TM@DVG; TM=Sc−Zn) as electrocatalysts for the nitrogen-reduction reaction (NRR) aided by density functional theory (DFT) calculations. By comparing energies for N₂ adsorption as well as the free energies associated with *N₂ activation and *N₂H formation, we successfully identified V@MVG, with the lowest potential of −0.63 V, to be an effective catalytic substrate for the NRR in an enzymatic mechanism. Electronic properties, including Bader charges, charge density differences, partial densities of states, and crystal orbital Hamilton populations, are further analyzed in detail. We believe that these results help to explain recent observations in this field and provide guidance for the exploration of efficient electrocatalysts for the NRR.     

Unoccupied titanium 3d states due to subcluster formation in stoichiometric TiO2 nanoparticles

The source of unoccupied Ti 3d states in the case of stoichiometric anatase structured (TiO₂)_n clusters has been investigated using ab initio methods. These unoccupied gap states appear for example in the case of a stoichiometric (TiO₂)₃₈ cluster. We show that the origin of these gap states is related to effective subcluster formation which gives rise to empty defect‐like gap states, when these states are split off from conduction band. © 2015 Wiley Periodicals, Inc.